With oxidizing chemistry, ONTOS can passivate sensitive semiconductor surfaces without damaging them, and can prepare ultra-clean, ultra-activated surfaces for direct bonding: die-to-die, die-to-wafer, or wafer-to-wafer.

ONTOS Atmospheric Plasma also produces highly activated surfaces for improved wetting, wicking, and adhesion. Activation has been demonstrated on Sn, Ag, Cu, Au, In, Ni, Al, Ti, Si, SiO2, Si3N4, Al2O3, photoresist, and FR composites.

The contact angle photos below for Tin-Silver are typical for all of the materials we have tried to date:

With reducing chemistry, comparable surface activation can be achieved while avoiding the oxidation of metal surfaces. This can be extremely useful in preparing photoresist-patterned wafers for subsequent aqueous processes such as plating, etching, anodic oxidation, etc.