Surface Preparation for Bonding:

• SnAg, SAC, Cu, Ni, Ag, In, Au – reflow or TC bonding
• Au-to-Au (demonstrated as low as 100°C)
• Cu-to-Cu (demonstrated as low as 250°C)
• SiO2–to–SiO2 (demonstrated at Room Temp)

Photoresist residue removal:

• Removes all traces of post-development PR residue
• Replaces Oxygen RIE or UV-Ozone– reduce oxides on exposed metals instead of growing them
• Activates photoresist surface for excellent wetting during aqueous processes

Photomask cleaning:

• Removes organic contamination without damaging sensitive mask materials (EUVL-safe!)
• Enables extreme wetting for aqueous cleaning processes – spot-free.

Native oxide removal from semiconductor surfaces:

• Epi preparation
• Remove uncontrolled air oxidation and organics
• Capable of dangling bond passivation with Nitrogen, Oxygen, or Hydrogen
• Zero bombardment damage

Organic contamination removal prior to adhesive bonding:

• Very effective at removing organics, including Silicones
• Activates surfaces for better wicking and adhesion

Pre-plating surface preparation:

• De-scums photoresist or laser-etched pattern
• Reduces oxides from plating base.
• Activates resist surface, sidewalls, and plating base for optimum wetting
• Even in very small geometries